Growth of InGaAsPBi on InP(311)B substrate

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Mar 23, 2022 9:00 AM - 11:15 AM F407 (F407)

Takeo Kageyama(Lumentum), Keisuke YAMANE(Toyohashi Univ. of Tech.)

10:15 AM - 10:30 AM

〇Kouichi Akahane¹, Atsushi Matsumoto¹, Toshimasa Umezawa¹, Naokatsu Yamamoto¹, Yoriko Tominaga², Atsushi Kanno¹ (1.NICT, 2.Hiroshima Univ.)

Keywords:Dilute bithmide compound semiconductors, Molecular beam epitaxy

In this study, we report the effect of Bi irradiation during InGaAsP growth on InP(311)B substrate by molecular beam epitaxy.