Oral presentation

[23a-F407-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Mar 23, 2022 9:00 AM - 11:15 AM F407 (F407)

Takeo Kageyama(Lumentum), Keisuke YAMANE(Toyohashi Univ. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[23a-F407-1] Improved crystallinity of GaPN alloys by antimony surfactant

〇Masashi Hikosaka¹, Keisuke Yamane¹, Ryosuke Iwatsuchi¹, Kento Hirai¹, Akihiro Wakahara¹ (1.Toyohashi Tech.)

9:15 AM - 9:30 AM

[23a-F407-2] Evaluation of N distribution in GaAsN films in which N is intentionally controlled using the atomic layer epitaxy method

〇SHUNSAKU TAKAGI¹, MASAHIRO KAWANO¹, RYO NAKAJIMA¹, HIDETOSHI SUZUKI¹ (1.Miyazaki Univ.)

9:30 AM - 9:45 AM

[23a-F407-3] Effect of photo-generated carriers on Raman spectra from Ga(N)As(Bi) alloys

〇(DC)Sho Hasegawa¹, Noriyuki Hasuike¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

10:00 AM - 10:15 AM

[23a-F407-4] Crystal quality of InGaSb inserted InAsSb layer on GaAs substrate

〇Koki Hombu¹, Shota Nakagawa¹, Yuto Iwakiri¹, Koji Maeda¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

10:15 AM - 10:30 AM

[23a-F407-5] Growth of InGaAsPBi on InP(311)B substrate

〇Kouichi Akahane¹, Atsushi Matsumoto¹, Toshimasa Umezawa¹, Naokatsu Yamamoto¹, Yoriko Tominaga², Atsushi Kanno¹ (1.NICT, 2.Hiroshima Univ.)

10:30 AM - 10:45 AM

[23a-F407-6] Growth of InAs Quantum Dots on InP substrates

〇JINKWAN KWOEN¹, Wenbo Zhan¹, Satoshi Iwamoto^1,2, Yasuhiko Arakawa¹ (1.NanoQuine, Univ. Tokyo, 2.RCAST, Univ. Tokyo)

10:45 AM - 11:00 AM

[23a-F407-7] Metamorphic-growth of InAs/GaAs(111)A and its application to infrared detectors

〇Takaaki Mano¹, Akihiro Ohtake¹, Takuya Kawazu¹, Hideki Miyazaki¹, Yoshiki Sakuma¹ (1.NIMS)

11:00 AM - 11:15 AM

[23a-F407-8] Control of the quantum structure by the thickness of GaAs spacer layer during submonolayer stack growth

〇Haruto Okuizumi¹, Ronel Roca¹, Itaru Kamiya¹ (1.Toyota Technological Institute)

Poster presentation

[23p-P07-1~7] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Mar 23, 2022 1:30 PM - 3:30 PM P07 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 3:30 PM

[23p-P07-1] First-principles calculations on the formation of nitrogen-induced point defects in GaAsPN solar cell materials

〇(B)Tatsuki Nakagawa¹, Keisuke Yamane¹, Shun One¹, Akihiro Wakahara¹ (1.Toyohashi University of Technology)

1:30 PM - 3:30 PM

[23p-P07-2] Effect of Rapid Thermal Annealing on GaPN Alloys Irradiated with Proton Beam

〇(B)Mizumi Mochida¹, Keisuke Yamane¹, Kento Hirai¹, Takeshi Ohshima², Tetsuya Nakamura³, Mitsuru Imaizumi³, Akihiro Wakahara¹ (1.Toyohashi Tech., 2.QST, 3.JAXA)

1:30 PM - 3:30 PM

[23p-P07-3] Effect of Thermal Annealing on Electric Characteristics in GaInSb HEMT Structure

〇Rikuto Yoshida¹, Munemasa Kunisawa¹, Koharu Hatori¹, Reo Ebihara¹, Issei Watanabe^2,1, Ryuto Machida², Yoshimi Yamashita², Shinsuke Hara², Akifumi Kasamatsu², Akira Endoh¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.NICT)

1:30 PM - 3:30 PM

[23p-P07-4] Characterization of Micro-Twins in GaInSb HEMT Structures Using Pole Figures by X-Ray Diffraction

〇Reo Ebihara¹, Munemasa Kunisawa¹, Koharu Hatori¹, Rikuto Yoshida¹, Issei Watanabe^2,1, Ryuto Machida², Yoshimi Yamashita², Shinsuke Hara², Akifumi Kasamatsu², Akira Endoh¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.NICT)

1:30 PM - 3:30 PM

[23p-P07-5] Growth conditions of the InGaAs thin film with 1-μm-band broadband and high-intensity emission

〇Kosuke Iwaide¹, Nobuhiko Ozaki¹ (1.Wakayama Univ.)

1:30 PM - 3:30 PM

[23p-P07-6] Excitation Power Dependence of Emission Lines from Er Doped GaAs

〇Shunpei Ito¹, Kengo Takamiya¹, Masataka Kobayashi², Shuhei Yagi¹, Hidefumi Akiyama², Hiroyuki Yaguchi¹ (1.Saitama Univ., 2.ISSP, Univ. Tokyo)

1:30 PM - 3:30 PM

▲ [23p-P07-7] Luminescence of 10-stack Submonolayer InAs Nanostructures at the 2D-3D Transition

〇(P)Ronel Intal Roca¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

Sessions

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[23a-F407-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[23a-F407-1] Improved crystallinity of GaPN alloys by antimony surfactant

[23a-F407-2] Evaluation of N distribution in GaAsN films in which N is intentionally controlled using the atomic layer epitaxy method

[23a-F407-3] Effect of photo-generated carriers on Raman spectra from Ga(N)As(Bi) alloys

[23a-F407-4] Crystal quality of InGaSb inserted InAsSb layer on GaAs substrate

[23a-F407-5] Growth of InGaAsPBi on InP(311)B substrate

[23a-F407-6] Growth of InAs Quantum Dots on InP substrates

[23a-F407-7] Metamorphic-growth of InAs/GaAs(111)A and its application to infrared detectors

[23a-F407-8] Control of the quantum structure by the thickness of GaAs spacer layer during submonolayer stack growth

[23p-P07-1~7] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[23p-P07-1] First-principles calculations on the formation of nitrogen-induced point defects in GaAsPN solar cell materials

[23p-P07-2] Effect of Rapid Thermal Annealing on GaPN Alloys Irradiated with Proton Beam

[23p-P07-3] Effect of Thermal Annealing on Electric Characteristics in GaInSb HEMT Structure

[23p-P07-4] Characterization of Micro-Twins in GaInSb HEMT Structures Using Pole Figures by X-Ray Diffraction

[23p-P07-5] Growth conditions of the InGaAs thin film with 1-μm-band broadband and high-intensity emission

[23p-P07-6] Excitation Power Dependence of Emission Lines from Er Doped GaAs

▲ [23p-P07-7] Luminescence of 10-stack Submonolayer InAs Nanostructures at the 2D-3D Transition

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