[23p-P07-1~7] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

▲ [23p-P07-7] Luminescence of 10-stack Submonolayer InAs Nanostructures at the 2D-3D Transition

〇(P)Ronel Intal Roca¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

Keywords:submonolayer, nanostructures, photoluminescence

Stacked submonolayer (SML)–grown InAs/GaAs nanostructures have been gaining interest as alternative to the well-known Stranski-Krastanov (SK) InAs nanostructures. Compared to SK growth, stacked SML growth involves the cycled deposition of SML-thick InAs and ML-thick GaAs. We recently reported evidence of 2D-3D growth transition in SML nanostructures, characterized by a redshift and broadening of the photoluminescence (PL). This transition leads to the existence of two distinct kinds of stacked SML nanostructures: 2D islands and 3D structures. In this study, the PL wavelength of 10-stack SML nanostructures is finely controlled across the 2D-3D growth transition by varying the amount of deposited InAs in the last cycle. A coexistence of 2D and 3D SML nanostructures at the transition will be shown by the presence of two distinct PL peaks.