[23a-F407-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[23a-F407-7] Metamorphic-growth of InAs/GaAs(111)A and its application to infrared detectors

〇Takaaki Mano¹, Akihiro Ohtake¹, Takuya Kawazu¹, Hideki Miyazaki¹, Yoshiki Sakuma¹ (1.NIMS)

Keywords:Infrared detector, InAs, GaAs

We investigated metamorphic growth of InAs on GaAs (111)A and its application to infrared photodetectors. At the initial stage of InAs growth, lattice-mismatch between the InAs and GaAs is almost relaxed by forming dislocation network at the interface. The residual strain in the InAs layer is only around 0.2%. In contrast, we found formation of threading dislocations with high density, which should be overcome by optimizing the growth. The infrared detector device exhibits good I-V characteristics. High withstand voltage and low leak current are confirmed. We also found photo-responsibility with an absorption edge at around 3 um.