Effect of photo-generated carriers on Raman spectra from Ga(N)As(Bi) alloys

Sho Hasegawa, Noriyuki Hasuike, Hiroyuki Nishinaka, Masahiro Yoshimoto

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[23a-F407-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Mar 23, 2022 9:00 AM - 11:15 AM F407 (F407)

Takeo Kageyama(Lumentum), Keisuke YAMANE(Toyohashi Univ. of Tech.)

9:30 AM - 9:45 AM

[23a-F407-3] Effect of photo-generated carriers on Raman spectra from Ga(N)As(Bi) alloys

〇(DC)Sho Hasegawa¹, Noriyuki Hasuike¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

Keywords:MBE, GaAs, Raman Spectroscopy

We have studied the vibrational properties of MBE grown Ga(N)As(Bi) by Raman spectroscopy. On the day of the presentation, we will discuss in detail the behavior of pho-generated carriers by excited lasers and their contribution to the LO phonon-plasmon coupling (LOPC) mode.