Evaluation of N distribution in GaAsN films in which N is intentionally controlled using the atomic layer epitaxy method

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Mar 23, 2022 9:00 AM - 11:15 AM F407 (F407)

Takeo Kageyama(Lumentum), Keisuke YAMANE(Toyohashi Univ. of Tech.)

9:15 AM - 9:30 AM

〇SHUNSAKU TAKAGI¹, MASAHIRO KAWANO¹, RYO NAKAJIMA¹, HIDETOSHI SUZUKI¹ (1.Miyazaki Univ.)

Keywords:Dilute N product