[23p-D113-1~19] 1.6 Ultrasonics

△ [23p-D113-16] Deposition and Evaluation of Ta₂O₅ Piezoelectric Thin Film on SRO/Pt/Si substrate

〇(M1)Keisuke Matsuura¹, Masashi Suzuki¹, Shoji Kakio¹, Masanori Kodera², Hiroshi Funakubo² (1.Univ. of Yamanashi, 2.Tokyo Institute of Technology)

Keywords:Ta2O5, Bulk Acoustic Wave, single crystal

The crystal structure and BAW properties of Ta₂O₅ thin films deposited using an RF magnetron sputtering system on SRO/Pt/Si substrates were evaluated.
From the measured pole figure plots, it was determined that β-Ta₂O₅ was epitaxially grown, and the film with high crystallinity was formed by decreasing the deposition rate. By increasing the film thickness, a film consisting mainly of uniaxially oriented films was deposited. From the HBAR properties, the k_t² of β-Ta₂O₅ was smaller than that of uniaxially oriented films, but the k_t² increased with increasing crystallinity.