[23p-E202-1~14] 15.4 III-V-group nitride crystals

[23p-E202-12] Elucidation of carrier transfer mechanism on photoelectrode surface using single-crystalline gallium nitride substrate

〇Shingi Yamaguchi¹, Takaya Ochiai², Tsutomu Minegishi¹, Masakazu Sugiyama^1,2 (1.RCAST, 2.Tokyo Univ.)

Keywords:Gallium Nitride, photoelectrode

Gallium nitride (GaN) is one of the candidate materials for photocatalysts, and it is known that hydrogen evolution reaction is promoted by co-catalysts such as platinum (Pt). However, since the interface between GaN and Pt is a Schottky junction, attempts have been made to elucidate the carrier transfer mechanism. In this study, we used a single-crystal GaN substrate grown by the supercritical liquid phase method as a photoelectrode and evaluated the effect of defect-derived levels on the carrier transfer.