[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

[23p-E302-1] [The 43rd JSAP Paper Award Speech] Room-temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures

〇Shigefusa Chichibu¹, Kohei Shima¹, Kazunobu Kojima¹, Shin-ya Takashima², Katsunori Ueno², Masaharu Edo², Hiroko Iguchi³, Tetsuo Narita³, Keita Kataoka³, Shoji Ishibashi⁴, Akira Uedono⁵ (1.IMRAM-Tohoku Univ., 2.Fuji Electric, 3.Toyota Central R&D Labs., 4.AIST, 5.Univ. of Tsukuba)

Keywords:semiconductor, Gallium nitride, Time-resolved photoluminecence

For accelerating the development of GaN power devices, current knowledge on the origins and dynamic properties of the major intrinsic nonradiative recombination centers (NRCs) in Mg-doped GaN are reviewed, as lightly to heavily doped p-type GaN segments are required but certain compensating defects including NRCs hinder their formation. The results of complementary time-resolved photoluminescence and positron annihilation spectroscopy measurements on the epitaxial and ion-implanted GaN:Mg formed on GaN substrates indicate the following: major intrinsic NRCs are the clusters of Ga vacancies (V_Ga) and N vacancies (V_N), namely V_Ga(V_N)₂ in the epitaxial GaN:Mg and (V_GaV_N)₃ in the ion-implanted GaN:Mg after appropriate thermal annealings. The minimum electron capture-crosssections of V_Ga(V_N)₂ and (V_GaV_N)₃ are commonly the middle of 10⁻¹³ cm² at 300 K, which is approximately four times the hole capture-cross-section of the major intrinsic NRCs in n-type GaN, namely V_GaV_N divacancies, being 7 × 10⁻¹⁴ cm².