[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

△ [23p-E302-14] Two-dimensional characterization of electric fields in n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

〇Yuto Yasui¹, Fumimasa Horikiri², Yoshinobu Narita², Noboru Fukuhara², Tomoyoshi Mishima³, Hiroki Imabayashi¹, Kenji Shiojima¹ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ.)

Keywords:Schottky contacts, scanning internal photoemission microscopy method, two-dimensional electric field characterization

It is difficult to determine the electric fields accurately at the electrode edges where the electric field crowding occurs by two-dimensional simulation. In order to obtain distribution of the electric fields experimentally, we conducted a two-dimensional characterization of the electric fields in Ni/n-GaN Schottky contacts using scanning internal photoemission microscopy method. We were able to visualize the electric field crowding on the edges, and estimated that the electric field on the edges was 1.28 times higher than that on the middle when a reverse voltage of -82 V was applied under the purple-laser irradiation.