[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

△ [23p-E302-13] Current increasing around avalanche breakdown of vertical p-n junction diode by dislocations

〇Woong Kwon¹, Seiya Kawasaki¹, Hirotaka Watanabe², Atsushi Tanaka², Manato Deki^1,3, Shugo Nitta², Yoshio Honda², Hirotaka Ikeda⁴, Kenji Iso^2,4, Hiroshi Amano^2,3,5 (1.Nagoya Univ., 2.IMaSS, 3.VBL, Nagoya Univ., 4.Mitsubishi Chemical, 5.Akasaki R.C.)

Keywords:low dislocation density GaN substrate, p-n junction diode, reverse bias leakage current

Vertical p-n junction diode with breakdown voltage of 900V was fabricated using GaN free-standing substrates with different threading dislocation density (TDD) and reverse J-V characteristics were evaluated. Devices with TDD of 2.08×10³[cm-2] increase current from 38[V] below the breakdown voltage, and devices with TDD of 1.27×105[cm-2] increase current from 73[V] below the breakdown voltage. and It was found that the device with higher TDD increases current from lower voltage.