[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

△ [23p-E302-12] Proposal of a Method for Carrier Concentration Distribution Measurement in GaN Vertical p-n Diode under Forward Bias utilizing Multi Photon Excitation OBIC

〇Makoto Yagi¹, Seiya Kawasaki¹, Takeru Kumabe¹, Yuto Ando², Atsushi Tanaka², Manato Deki^1,4, Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

Keywords:GaN, Conductivity modulation

Although GaN has a short recombination lifetime and conductivity modulation does not occur easily in bipolar devices, there is a report that the series resistance of vertical GaN p-n diodes decreases due to conductivity modulation in the resistive region.
In order to analyze the mechanism of conductivity modulation, we attempted to measure the carrier distribution inside the diode by injecting carriers into a small area and measuring the forward I-V using a multiphoton excitation microscope that can generate carriers in a spatially narrow area.