[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

△ [23p-E302-17] Reduction of Specific Contact Resistance on p^--GaN by Thermal Annealed Mg Layer

〇Shun Lu¹, Manato Deki², Jia Wang³, Kazuki Ohnishi¹, Yuto Ando³, Hirotaka Watanabe³, Takeru Kumabe¹, Shugo Nitta³, Yoshio Honda³, Hiroshi Amano^2,3 (1.Dept. of Elec. Nagoya Univ., 2.Nagoya Univ. VBL, 3.Nagoya Univ. IMaSS)

Keywords:GaN, ohmic contact

In this research, we demonstrated a fabrication process for the ohmic contact on p^--type GaN with annealed Mg layer. An Ohmic contact with a contact resistance of 0.158Ohm cm² is realized without any etching damage.