[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

[23p-E302-3] Mg clustering mechanism by high-concentration Mg implantation into GaN

〇Ryo Tanaka¹, Ashutosh Kumar², Jun Chen², Shinya Takashima¹, Masaharu Edo¹, Jun Uzuhashi², Tadakatsu Ohkubo², Takashi Sekiguchi², Kazutaka Mitsuishi², Kazuhiro Hono² (1.Fuji Electric, 2.NIMS)

Keywords:Gallium nitride, Cluster, Ion Implantation

For practical use of vertical GaN MOSFETs, it is necessary to locally form a high concentration p-type layer for good p-type ohmic contact by Mg ion-implantation. However, there is a problem that Mg clusters are formed and the Mg concentration as an acceptor decreases when Mg is implanted 1E19cm^-3 or more. In this presentation, we investigated the formation mechanism of Mg clusters by N-ion implantation into p-type GaN epitaxial layers.