[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

[23p-E302-4] Annealing temperature dependence of depth distribution of net donor density in ultra-low concentration Si-ion implanted GaN

〇Hiroko Iguchi¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:galium nitride, ion implantation, silicon

While it has been reported that n-type GaN can be formed by annealing at 1200 ℃ after Si ion implantation, the details of the defects formed by Si ion implantation and subsequent annealing have not been clarified compared to the case of Mg implanted GaN. In order to clarify the behavior of Si ion implantation defects, we examined the depth distribution of the effective donor density of an annealed sample by implanting Si into an n-type GaN layer at an ultra-low concentration.