[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

[23p-E302-7] Control of Mg concentration in GaN using vacancy-induced Mg diffusion

〇Yuta Ito¹, Kenya Shimamura¹, Hirotaka Watanabe², Manato Deki³, Shugo Nitta², Yoshio Honda², Atsushi Tanaka², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

Keywords:ion implantation, diffusion, GaN

Localized p-type conduction control is an essential technique for the development of high voltage GaN vertical power devices. So far, we have successfully fabricated p-type GaN using the Mg thermal diffusion method, which will be reported in a separate talk on the same day. However, in the Mg thermal diffusion method, the Mg concentration is constant (2~3E+18 cm^-3 ) in all annealing conditions, making it difficult to control the Mg concentration. In this study, VGa concentration was controlled by N implantation concentration, and the dependence of N implantation concentration on Mg concentration after thermal diffusion was evaluated.