[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

[23p-E302-6] The p-type conversion process by Mg thermal diffusion into GaN

〇Yuta Ito¹, Shun Lu¹, Hirotaka Watanabe², Manato Deki³, Shugo Nitta², Yoshio Honda², Atsushi Tanaka², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

Keywords:ion implantation, diffusion, GaN

Localized p-type conduction control of GaN is an essential technique for fabricating vertical power devices. We focused on the Mg thermal diffusion method as an alternative to the Mg ion implantation method. p-type doping of GaN using the Mg thermal diffusion method was reported 20 years ago, and was limited to annealing at temperatures below 1000°C for several hours. In this study, we attempted to fabricate and characterize p-type GaN using the Mg thermal diffusion method in order to establish a doping technique that enables concentration distribution control.