[23p-E307-1~20] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[23p-E307-10] Optimum design of channel material and surface orientation for extremely-thin-body nMOSFETs robust to surface roughness scattering

〇(DC)Kei Sumita¹, Chia-Tsong Chen¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.U. Tokyo)

Keywords:nanosheet, surface roughness scattering, mobility

Extremely-thin-body nanosheet channels are the most promising structure for the future technology nodes of CMOS devices. However, mobility degradation due to surface roughness scattering is a serious issue for the channel thickness scaling. We have previously reported the new model of surface roughness scattering with good quantitativeness. Therefore, in this study, we assessed the mobility of various materials in various surface orientations. As a result, we clarified the optimum channel material and surface orientation for the nanosheet channel.