[23p-E307-1~20] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[23p-E307-14] Effect of Percolation Path for Random Variability in Bulk MOSFETs at Cryogenic Temperature

〇Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Hiroshi Oka², Takahiro Mori², Masaharu Kobayashi^1,3, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.AIST, 3.d.lab, Univ. of Tokyo)

Keywords:MOSFET, Cryogenic temperature, Variability

Threshold voltage (V_TH) variability of bulk MOSFETs was measured at room temperature (RT) and 4K. It is newly found that the temperature dependences of V_THEX (defined by extrapolation) and V_THC (defined by constant current) show different behaviors and the percolation path in the channel, which is caused by potential valley due to random dopant fluctuations (RDF), affects the temperature dependence of V_THC. The reasons for these phenomena are reported.