[23p-E307-1~20] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[23p-E307-15] Origins of DIBL-like Id-Vg characteristics observed in cryogenic MOSFETs

〇Takumi Inaba¹, Hidehiro Asai¹, Koichi Fukuda¹, Hiroshi Oka¹, Takahiro Mori¹ (1.AIST)

Keywords:Drain Induced Barrier Lowering, Cryo-CMOS

The detailed analysis of carrier conduction in cryogenic MOSFETs, for the application to qubit operations, is attracting much attention.
Although recent studies have shown increasing DIBL at cryogenic temperature, the origin was not discussed in detail.
In this talk, we will show threshold voltage shifts at cryogenic temperature, which looks like increasing DIBL, observed in bulk PMOS and results obtained from cryogenic TCAD simulations indicating that the threshold voltage shift was caused by other mechanisms rather than DIBL.