[23p-E307-1~20] 13.5 デバイス／配線／集積化技術

▲ [23p-E307-7] Estimation of Minimum Operating Voltage in FDSOI SRAM Using Gamma Distribution

〇(M2)Hongkuan Yu¹、Tomoko Mizutani¹、Kiyoshi Takeuchi¹、Takuya Saraya¹、Masaharu Kobayashi^1,2、Toshiro Hiramoto¹ (1.Institute of Industrial Science, The University of Tokyo、2.d.lab, The University of Tokyo)

キーワード：SRAM, variability, minimum operating voltage

Minimum operating voltages (V_min) of every cell on a 32kb fully-depleted (FD) SOI static random access memory (SRAM) macro are successfully measured. The competing V_min distribution models, which include the gamma and log-normal distribution, are approximated using the generalized gamma distribution (GENG). It is found that V_min of the cells follow the gamma distribution. This finding gives a simple method to estimate worst V_min of an SRAM macro by measuring few samples and make linear extrapolation from the gamma distribution.