[23p-F308-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

[23p-F308-11] Formation of n⁺ Layer by Phosphorus Ion Implantation and Photosensitivity of Mg₂Si-PD

〇Rikuto Nakamura¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:Magnesium silicide, Photodiode, Ion implantation

We have been developing Mg₂Si- pn junction photodiodes (PDs) for short-wavelength infrared sensors [1]. We are investigating the formation process of back-illuminated PDs for future imaging devices, and one of the challenges is to reduce the formation temperature of the n+ layer on the back side [2]. We have achieved the formation of the backside n+ layer by phosphorus ion implantation and low-temperature heat treatment, and reported that the Mg₂Si- pn junction PDs showed good current-voltage (I-V) characteristics and spectral response [3]. In this study, we report a detailed analysis of the spectral response characteristics of the fabricated PDs.