Poster presentation

[22p-P05-1~4] 13.2 Exploratory Materials, Physical Properties, Devices

Tue. Mar 22, 2022 4:00 PM - 6:00 PM P05 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[22p-P05-1] Preparation and characterization of Fe-substituted MnSi_γ single crystal samples

〇(M1)Toshiaki Chiba¹, Kei Hayashi¹, Yuzuru Miyazaki¹ (1.Touhoku Univ.)

4:00 PM - 6:00 PM

[22p-P05-2] Studying the conditions in the iodination reaction for fabrication of flat CuI thin films

〇(M1)Mengyang Wang¹, Isomura Masao¹, Kaneko Tetsuya¹ (1.Tokai Univ.)

4:00 PM - 6:00 PM

[22p-P05-3] Thermoelectric properties of lanthanide-doped perovskite SrTiO₃ by DFT+U calculation

〇(BC)Yuta Onodera¹, Mariko Murayama¹, Yuri Tamamoto¹, Motohisa Nohmi¹, Xinwei Zhao¹ (1.Tokyo Univ. of Science)

4:00 PM - 6:00 PM

[22p-P05-4] High precision evaluation of carrier mobility in high resistive materials using ionic liquids.

〇(M1)Tsuyoshi Shibasaki¹, Takumi Kimura¹, Yasuhiro Yamada¹, Kenichi Oto¹ (1.Chiba Univ.)

Oral presentation

[23a-F308-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Mar 23, 2022 9:00 AM - 11:45 AM F308 (F308)

Takashi Suemasu(Univ. of Tsukuba), Kosuke Hara(Univ. of Yamanashi)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[23a-F308-1] Evaluation of Mg₂Si substrate using X-ray rocking curve measurement (Ⅱ)

〇Tsubasa Umehara¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

9:15 AM - 9:30 AM

[23a-F308-2] Relationship between carrier concentration and IR absorption in Mg₂Si crystal II

〇Hiroto Tsuchida¹, Naoki Mizunuma¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

9:30 AM - 9:45 AM

[23a-F308-3] Electronic States and Optical Properties of NaSi

〇Motoharu Imai¹, Takahiro Yamada², Hisanori Yamane² (1.NIMS, 2.Tohoku Univ.)

9:45 AM - 10:00 AM

[23a-F308-4] Single crystal growth and physical properties of NaAlSi

〇Takahiro Yamada¹, Daigorou Hirai², Toshiya Ikenobe², Hisanori Yamane¹, Zenji Hiroi² (1.IMRAM, Tohoku Univ., 2.ISSP, Univ. of Tokyo)

10:00 AM - 10:15 AM

[23a-F308-5] Synthesis and physical properties evaluations of SrSi₂II

〇Motoharu Imai¹, Babak Alinejad², Haruhiko Udono² (1.NIMS, 2.Ibaraki Univ.)

10:30 AM - 10:45 AM

▲ [23a-F308-6] Synthesis and Properties of Type II Ge clathrate film on Sapphire Substrate

〇(D)Tun Naing Aye¹, Yuto Kawaura¹, Himanshu S. Jha¹, Fumitaka Ohashi¹, Tetsuji Kume¹ (1.Gifu Univ.)

10:45 AM - 11:00 AM

[23a-F308-7] Synthesis of Ge-based nanosheet bundles by thermal annealing of CaGe₂ powders

〇(M1C)Kaito Sekino¹, Yosuke Shimura^1,2, Hirokazu Tatsuoka¹ (1.Shizuoka Univ., 2.RIE Shizuoka Univ.)

11:00 AM - 11:15 AM

[23a-F308-8] Fine structure property of Mg₂Si nanosheet bundles synthesized by liquid-phase process

〇Keigo Sasaki¹, Tomoya Koga¹, Yosuke Shimura^1,2, Hirokazu Tatsuoka¹ (1.Shizuoka Univ., 2.RIE Shizuoka Univ.)

11:15 AM - 11:30 AM

[23a-F308-9] Fine structure of MnSi_1.7Nanosheet Bundles Synthesized in MnCl₂ molten salt

〇Fumio Komeda¹, Shogo Itoh², Yosuke Shimura^2,3, Hirokazu Tatsuoka² (1.Shizuoka Univ., 2.Shizuoka Univ, 3.RIE Shizuoka Univ.)

11:30 AM - 11:45 AM

[23a-F308-10] Control of carrier density for nanocrystalline-β-FeSi₂/Si composite thin films

〇(M1)Takumi KIdokoro¹, Tomohiro Matsuda¹, Hiroshi Katsumata¹ (1.Meiji Univ.)

Oral presentation

[23p-F308-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Mar 23, 2022 1:15 PM - 5:00 PM F308 (F308)

Hirokazu Tatsuoka(Shizuoka Univ.), Kenji Yamaguchi(QST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[23p-F308-1] Improving the machine learning prediction of the composition ratio of BaSi₂ thin films deposited by vacuum evaporation

〇Ryuto Ueda¹, Keisuke Arimoto¹, Junji Yamanaka², Kosuke Hara¹ (1.CCST, Univ. of Yamanashi, 2.CIA, Univ. of Yamanashi)

1:30 PM - 1:45 PM

[23p-F308-2] Evaluation of the potential barrier height in polycrystalline BaSi₂ films prepared by sputtering

〇Kazuki Kido¹, Ryota Koitabashi¹, Hayato Hasebe¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ.Tsukuba, 2.Tosoh Corporation)

1:45 PM - 2:00 PM

[23p-F308-3] Characterizations of B-doped BaSi₂ films formed by sputtering

〇Hayato Hasebe¹, Ryota Koitabashi¹, Kazuki Kido¹, Yudai Yamashita¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ., 2.Tosoh Corp.)

2:00 PM - 2:15 PM

[23p-F308-4] Effect of post annealing on B-doped p-BaSi₂/n-Si heterojunction solar cells

〇Shunsuke Narita¹, Yudai Yamashita¹, Sho Aonuki¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ.)

2:15 PM - 2:30 PM

[23p-F308-5] Fabrication of Zn_1-xGe_xO_y for an electron transporting layer of BaSi₂ solar cells

〇Kaori Takayanagi¹, Yudai Yamashita¹, Sho Aonuki¹, Shunsuke Narita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

2:30 PM - 2:45 PM

[23p-F308-6] Investigation of NiO films for BaSi₂ hetero-junction solar cells

〇Haruki Takenaka¹, Ryota Koitabashi¹, Hayato Hasebe¹, Kazuki Kido¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ., 2.Tosoh Corp.)

2:45 PM - 3:00 PM

[23p-F308-7] Analysis of the depletion layer in the InAs p-n junction using low-temperature STM

〇Kyoichi Suzuki¹, Koji Onomistu², Kiyoshi Kanisawa² (1.Fukuoka Inst. Tech, 2.NTT BRL)

3:15 PM - 3:30 PM

[23p-F308-8] Revisiting the limiting efficiency of BaSi₂ solar cells

〇Kosuke Hara¹ (1.CCST, Univ. of Yamanashi)

3:30 PM - 3:45 PM

[23p-F308-9] Effective carrier lifetime in BaSi₂ films deposited on Si by close-spaced evaporation

〇Kosuke Hara¹, Ryota Takagaki¹, Keisuke Arimoto¹, Noritaka Usami² (1.Univ. of Yamanashi, 2.Nagoya Univ.)

3:45 PM - 4:00 PM

△ [23p-F308-10] Solar cell application of P-ion-implanted BaSi₂ films

〇Sho Aonuki¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

4:00 PM - 4:15 PM

[23p-F308-11] Formation of n⁺ Layer by Phosphorus Ion Implantation and Photosensitivity of Mg₂Si-PD

〇Rikuto Nakamura¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

4:15 PM - 4:30 PM

[23p-F308-12] Carrier lifetime and dark current of Mg₂Si pn-junction diode formed on Mg₂Si substrate by thermal diffusion (II)

Naoki Mizunuma¹, 〇Haruhiko Udono¹ (1.Ibaraki Univ.)

4:30 PM - 4:45 PM

[23p-F308-13] Evaluation of drift and diffusion in organic semiconductors by using TRM-SHG measurement

〇Shinpei Nagasaka¹, Takaaki Manaka¹, Dai Taguchi¹ (1.Tokyo Tech.)

4:45 PM - 5:00 PM

[23p-F308-14] Thickness Dependence of Conduction Band Bottom in Germanium Thin Films: a First-principles study

〇Jun Yamauchi¹ (1.Keio Univ.)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[22p-P05-1~4] 13.2 Exploratory Materials, Physical Properties, Devices

[22p-P05-1] Preparation and characterization of Fe-substituted MnSi_γ single crystal samples

[22p-P05-2] Studying the conditions in the iodination reaction for fabrication of flat CuI thin films

[22p-P05-3] Thermoelectric properties of lanthanide-doped perovskite SrTiO₃ by DFT+U calculation

[22p-P05-4] High precision evaluation of carrier mobility in high resistive materials using ionic liquids.

[23a-F308-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

[23a-F308-1] Evaluation of Mg₂Si substrate using X-ray rocking curve measurement (Ⅱ)

[23a-F308-2] Relationship between carrier concentration and IR absorption in Mg₂Si crystal II

[23a-F308-3] Electronic States and Optical Properties of NaSi

[23a-F308-4] Single crystal growth and physical properties of NaAlSi

[23a-F308-5] Synthesis and physical properties evaluations of SrSi₂II

▲ [23a-F308-6] Synthesis and Properties of Type II Ge clathrate film on Sapphire Substrate

[23a-F308-7] Synthesis of Ge-based nanosheet bundles by thermal annealing of CaGe₂ powders

[23a-F308-8] Fine structure property of Mg₂Si nanosheet bundles synthesized by liquid-phase process

[23a-F308-9] Fine structure of MnSi_1.7Nanosheet Bundles Synthesized in MnCl₂ molten salt

[23a-F308-10] Control of carrier density for nanocrystalline-β-FeSi₂/Si composite thin films

[23p-F308-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

[23p-F308-1] Improving the machine learning prediction of the composition ratio of BaSi₂ thin films deposited by vacuum evaporation

[23p-F308-2] Evaluation of the potential barrier height in polycrystalline BaSi₂ films prepared by sputtering

[23p-F308-3] Characterizations of B-doped BaSi₂ films formed by sputtering

[23p-F308-4] Effect of post annealing on B-doped p-BaSi₂/n-Si heterojunction solar cells

[23p-F308-5] Fabrication of Zn_1-xGe_xO_y for an electron transporting layer of BaSi₂ solar cells

[23p-F308-6] Investigation of NiO films for BaSi₂ hetero-junction solar cells

[23p-F308-7] Analysis of the depletion layer in the InAs p-n junction using low-temperature STM

[23p-F308-8] Revisiting the limiting efficiency of BaSi₂ solar cells

[23p-F308-9] Effective carrier lifetime in BaSi₂ films deposited on Si by close-spaced evaporation

△ [23p-F308-10] Solar cell application of P-ion-implanted BaSi₂ films

[23p-F308-11] Formation of n⁺ Layer by Phosphorus Ion Implantation and Photosensitivity of Mg₂Si-PD

[23p-F308-12] Carrier lifetime and dark current of Mg₂Si pn-junction diode formed on Mg₂Si substrate by thermal diffusion (II)

[23p-F308-13] Evaluation of drift and diffusion in organic semiconductors by using TRM-SHG measurement

[23p-F308-14] Thickness Dependence of Conduction Band Bottom in Germanium Thin Films: a First-principles study

Authenticate

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[22p-P05-1~4] 13.2 Exploratory Materials, Physical Properties, Devices

[23a-F308-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [23a-F308-6] Synthesis and Properties of Type II Ge clathrate film on Sapphire Substrate

[23p-F308-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

△ [23p-F308-10] Solar cell application of P-ion-implanted BaSi2 films

Authenticate

△ [23p-F308-10] Solar cell application of P-ion-implanted BaSi₂ films