[23p-F308-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

[23p-F308-14] Thickness Dependence of Conduction Band Bottom in Germanium Thin Films: a First-principles study

〇Jun Yamauchi¹ (1.Keio Univ.)

Keywords:germanium, first-principles calculation, thin films

Considering GOIs with (001), (110), and (111) surface, I investigated the change in the conduction band bottom structure from the bulk to sub-nm thin films of Ge by first-principles calculation. The electron valley structures are semi-quantitatively consistent with those based on the effective mass model in the bulk, and on the (001) model, interesting results such as the replacement of the lowest energy valley from the valley caused by the L point, which is the lower end of the bulk, to Delta2 at a film thickness of 1.5 nm are obtained.