[23p-F308-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

[23p-F308-7] Analysis of the depletion layer in the InAs p-n junction using low-temperature STM

〇Kyoichi Suzuki¹, Koji Onomistu², Kiyoshi Kanisawa² (1.Fukuoka Inst. Tech, 2.NTT BRL)

Keywords:p-n junction, scanning tunneling microscope

Applying scanning tunneling microscopy/spectroscopy (STM/STS) to semiconductor devices enables us to observe and analyze the spatial variation of the energy band profile or the electron existence probability corresponding to the squared wave function at the nanometer scale. Here, we examine the depletion layer width and the ionization ratio of the dopant impurities in an InAs p-n junction based on the experimental results of the low-temperature STM/STS on the cross-sectional surface.