[23p-P03-1~3] 3.15 Silicon photonics and integrated photonics

[23p-P03-2] High-Q Silicon nanocavities fabricated with binary mask and phase-shift mask (II)

〇(B)Masaaki Katsura¹, Yuji Ota¹, Yuki Takahashi¹, Makoto Okano², Yasushi Takahashi¹ (1.Osaka Pref. Univ., 2.AIST)

Keywords:High-Q Silicon nanocavities, Binary mask, Phase-shift mask

In order to improve the performance of devices such as nanocavities and silicon Raman lasers, it is necessary to increase the accuracy of air hole creation, and improving photolithography is an important issue. In a previous study, we compared high-Q nanocavities fabricated using binary and phase-shift masks. In this paper, we report on a comparison of nanocavities fabricated using binary and phase-shift masks on the same SOI substrate for more precise comparison.