[23p-P09-1~10] 12.4 Organic light-emitting devices and organic transistors

[23p-P09-1] Water-Induced Instabilities in Laminated Organic Single-Crystal FETs Controlled by Source/Drain Electrode Thickness

〇(M1)Yuto Hamahiga¹, Ryo Nouchi^1,2 (1.Osaka Pref. Univ., 2.JST-PRESTO)

Keywords:field effect transistor, electrode thickness, humidity dependence

It is well known that when water molecules penetrate to the insulator-semiconductor interface, a current decrease due to a gate bias stress occurs. Actual FET characteristics are affected in combination with a current increase originating from the source and drain electrodes, which has been identified by our group. In this presentation, we will report that the hysteresis in bottom-gate, bottom-contact FETs with a laminated organic single-crystal channel can be modulated by controlling the penetration of water molecules near the electrodes with the electrode thickness.