[23p-P12-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[23p-P12-7] Origin of hole generation in p-type N-doped SnO_x

〇Kotaro Watanabe¹, Takuma Kawaguchi¹, Yukiya Ichinoseki¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

Keywords:oxide semiconductor, nitrogen doping, hole generation