[23p-P12-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[23p-P12-8] Effect of partial nitridation of sputtered and annealed SnO_x thin films in nitrogen atmosphere

〇(B)Takuma Kawaguchi¹, Kotaro Watanabe¹, Yukiya Ichinoseki¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

Keywords:oxide semiconductor, nitrogen doping, nitrogen sputtering