[24a-E102-1~10] 17.3 Layered materials

△ [24a-E102-3] Low temperature metal-organic chemical vapor deposition of WS₂ using n-BuNC-W(CO)₅ as a W precursor

〇Kirito Cho¹, Hideaki Machida³, Masato Ishikawa³, Hiroshi Sudoh³, Hitoshi Wakabayashi⁴, Ryo Yokogawa^1,2, Nanomi Sawamoto^1,2, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.Gas-phase Growth Ltd., 4.Tokyo Tech Univ.)

Keywords:WS2, MOCVD, Low temperature metal-organic chemical vapor deposition

Tungsten disulfide (WS₂) is a typical two-dimensional multilayer material and has been actively studied for applications in various fields due to its favorable properties such as reasonably wide band gap (monolayer : 2.03 eV, bulk : 1.32 eV) and excellent stability. In particular, WS₂ with a large area and several layers has a high potential as a channel material for MOSFETs in next-generation LSIs. In this study, we deposited WS₂ films using n-BuNC-W(CO)₅ as a tungsten precursor and (t-C₄H₉)₂S₂ as a sulfur precursor, and evaluated their properties.