[24a-E102-1~10] 17.3 Layered materials

▼ [24a-E102-2] Epitaxial Growth of MoS₂ on Sapphire (c-Al₂O₃) by MOCVD

〇(D)Myeongok Kim^1,2, Nazmul Ahsan², Nicholas Trainor³, Chen Chen³, Dorota Kowalczyk⁴, Joan Redwing³, Yoshitaka Okada^1,2 (1.Eng. UTokyo, 2.RCAST UTokyo, 3.Penn. State Univ., 4.Lodz Univ.)

Keywords:MOCVD, MoS2, Sapphire substrate

For optoelectronic device applications of transition metal dichalcogenides, it is critical to understand their growth mechanism. This research studies the epitaxial growth of MoS₂ on sapphire substrate by MOCVD. Films grown for different time were characterized by in-plane XRD, AFM, and Raman spectroscopy. In-plane XRD at (110) plane shows epitaxial relations between MoS₂ and sapphire throughout the entire growth process from the early stage characterized by uncoalesced triangle domain to the later stage with coalesced terrace structure. Raman peak shift of A_1g mode confirms the increased thickness with longer growth time. The height of MoS₂ triangle domain corresponds to that of MoS₂ from AFM results. The step height of the terrace structure, however, does not correspond to the thickness of MoS₂. This may attribute to the distortion of the sapphire substrate during the growth at high temperature under hydrogen atmosphere.