[24a-E105-1~10] 12.7 Biomedical Engineering and Biochips

△ [24a-E105-4] pH Sensing with Common-gate ISFET or Diamond Electrolyte Solution Gate FET
With Stainless Steel Vessel at RT or High Temperature (80 ℃)

〇Reona Nomoto¹, Shuto Kawaguchi¹, Hirotaka Sato¹, Teruaki Takarada¹, Yu Hao Chang¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.ZAIKEN)

Keywords:Diamond, semiconductor, pH sensing

In this study, we propose a pH sensing method by grounding the gate. When the gate is grounded, the FET reaches the saturation region at the drain voltage VDG = 0, so that sensing can be performed by driving only the source voltage VSG. The pH sensitivity of the grounded gate type ISFET and the diamond electrolyte solution gate FET was measured for multi-sensing of the source-drain FET probe with a common gate.