[24a-E204-1~8] 6.3 Oxide electronics

[24a-E204-4] Resistive Switching Properties of Amorphous GaO_x Crossbar Array Memristor

〇Naoki Masaoka¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Akira Sakai¹ (1.Osaka Univ., Grad. Sch. Eng. Sci.)

Keywords:memristor, synapse, resistive switching

Since the resistance of memristors changes with application of voltage, a lot of research has been conducted for their application to synaptic devices. In the past, we have developed memristors using GaO_x deposited in an oxygen atmosphere, but there was a problem that obtained resistance ratio was small. This time, we tried to solve this problem by using GaO_x deposited in an argon atmosphere. In addition, with future integration in mind, we fabricated a crossbar structure memristor and evaluated its electrical characteristics.