The 69th JSAP Spring Meeting 2022

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Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[24a-E204-1~8] 6.3 Oxide electronics

Thu. Mar 24, 2022 9:30 AM - 11:45 AM E204 (E204)

Hisashi Shima(AIST), Yusuke Nishi(Kyoto Univ.)

10:45 AM - 11:00 AM

[24a-E204-5] Theoretical demonstration of analog resistance change in Ta2O5-based ReRAM cells

〇Yuto Nakamura1,2, Yusuke Nishi1 (1.NIT Maizuru College, 2.TUT)

Keywords:ReRAM, Simulation

In this study, we attempted to demonstrate the analog resistance change in the Pt/TaOx/Ta2O5/Pt cells by simulation. In order to demonstrate the analog resistance change characteristics in which set and reset occur continuously, the filament model uses a truncated cone shape instead of the conventional cylindrical shape. Unlike the conventional cylindrical filament model in which discrete resistance changes occur due to rapture and repair, the resistance value depends on the oxygen-vacancies concentration and filament diameter in the truncated cone-shaped filament model.