[24a-E204-1~8] 6.3 Oxide electronics

[24a-E204-6] Resistance change behavior under voltage sweep of TiN/Hf/MgOx/Pt/Ti-ReRAM

〇Koki Kimura¹, Tomoya Noshita², Rintaro Hatanaka¹, Tomohiro Shimizu¹, Takeshi Ito¹, Shoso Shingubara¹ (1.Graduate School of Science and Engineering,Kansai Univ., 2.Kansai Univ.)

Keywords:Resistive random access memory

In recent years, ReRAM is expected as a high-speed non-volatile memory that can eliminate bottlenecks in data processing.It has been reported that ReRAM using MgOx for the switching layer may operate with low power consumption.This time, we used a method of oxidizing a metal Mg film by atmospheric heat treatment to form an MgOx layer for ReRAM using MgOx as a switching layer.We examined the comparison of switching characteristics of two types of devices using TiN or TiN / Hf laminated film for the top electrode.