[24a-E302-1~13] CS.9 Code-sharing Session of 13.7 & 15.6

△ [24a-E302-1] Characterization of mist-Al₂O₃ gate insulator and its application in mist-Al₂O₃/AlGaN/GaN MOS-HEMTs

〇(M1)Tomohiro Motoyama¹, Shun Urano², Ali Baratov², Yusui Nakamura¹, Masaaki Kuzuhara³, Joel Asubar², Zenji Yatabe¹ (1.Kumamoto Univ., 2.Univ. of Fukui, 3.Kwansei Gakuin Univ.)

Keywords:mist-CVD, GaN, HEMT

Al₂O₃ gate insulator is one of the most attractive dielectric materials for AlGaN/GaN MOS-HEMT. High-quality Al₂O₃ thin films have been reportedly obtained, using ALD method. One alternative approach to obtain high-quality Al₂O₃ thin films is the mist-CVD. In this work, we report on the deposition of amorphous Al₂O₃ thin films by mist-CVD method subsequent investigation of the deposition behavior. In addition, we have fabricated AlGaN/GaN MOS diodes using Al₂O₃ gate dielectric deposited by mist-CVD.