[24a-E302-1~13] CS.9 Code-sharing Session of 13.7 & 15.6

△ [24a-E302-2] AlGaN/GaN MIS-HEMTs with mist- and ALD-Al₂O₃ gate dielectric

〇Shun Urano¹, Joel Asubar¹, Rui Shan Low¹, Faris Muhammad¹, Masaki Ishiguro¹, Itsuki Nagase¹, Ali Batarov¹, Tomohiro Motoyama², Yusui Nakamura², Masaaki Kuzuhara³, Zenji Yatabe² (1.Univ. Fukui, 2.Kumamoto Univ., 3.Kwansei Univ.)

Keywords:GaN, AlGaN/GaN HEMT, MIS

Alumina (Al₂O₃), which is one of the popular gate dielectric films for AlGaN/GaN MIS HEMTs, is usually deposited by atomic layer deposition (ALD) under vacuum conditions using highly pyrophoric trimethylaluminum as an aluminum precursor. Recently, it has been reported that Al₂O₃ thin films can be fabricated by mist-CVD, which is a low-cost and environmentally friendly method. In this study, we report the fabrication of MIS-HEMTs using mist-Al₂O₃ and ALD-Al₂O₃ as gate dielectrics and subsequently compare their electrical characteristics.