[24a-E302-1~13] CS.9 Code-sharing Session of 13.7 & 15.6

[24a-E302-13] Effects of post-deposition annealing on SiO₂/β-Ga₂O₃(001) band diagram

〇Daiki Takeda¹, Koji Kita¹ (1.The Univ. of Tokyo)

Keywords:Ga2O3, band diagram, band alignment

The differences in the band diagram of MOS structure of β-Ga₂O₃(001) under different annealing conditions were evaluated by photoelectron spectroscopy.The ionization potentials evaluated by UPS before annealing and after O₂, N₂, and H₂ annealing were 8.2~8.4 eV.The magnitude of valence band offset of SiO₂/ β-Ga₂O₃(001) after SiO₂ deposition with varying O₂ annealing at 600℃ for 3hr or 1000℃ for 1hr was evaluated by XPS.TComparing the 600℃ case with the 1000℃ case, the valence band offset was smaller by about 0.3 eV with the higher temperature annealing, which was larger than the annealing-induced change seen at UPS.