Effects of gas pressure and substrate position on deposition characteristics of a-C:H films deposited by plasma CVD method

Shinjiro Ono, Daichi Yoshikawa, Sung Hwa Hwang, Takamasa Okumura, Kunihiro Kamataki, Naoto Yamashita, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Jun Seok Oh, Susumu Takabayashi, Tatsuyuki Nakatani

Presentation information

Oral presentation

8 Plasma Electronics » 8.3 Plasma nanotechnology

[24p-D114-1~11] 8.3 Plasma nanotechnology

Thu. Mar 24, 2022 1:00 PM - 4:15 PM D114 (D114)

Takeshi Kitajima(National Defence Academy), Manabu Tanaka(Kyushu Univ.)

3:45 PM - 4:00 PM

[24p-D114-10] Effects of gas pressure and substrate position on deposition characteristics of a-C:H films deposited by plasma CVD method

〇(B)Shinjiro Ono¹, Daichi Yoshikawa¹, Sung Hwa Hwang¹, Takamasa Okumura¹, Kunihiro Kamataki¹, Naoto Yamashita¹, Naho Itagaki¹, Kazunori Koga^1,2, Masaharu Shiratani¹, Jun Seok Oh³, Susumu Takabayashi⁴, Tatsuyuki Nakatani⁵ (1.Kyushu Univ., 2.NINS, 3.Osaka City Univ., 4.Ariake College, 5.Okayama Univ. Sci.)

Keywords:hydrogenated amorphous carbon, carbon nano particles