[24p-D215-1~7] CS.2 Code-sharing Session of 3.5 & 3.14

△ [24p-D215-4] Design of LiNbO₃/GaN Transverse Quasi-Phase-Matched Wavelength Conversion Device for High Efficiency Squeezed Light Generation

〇(DC)Ryosuke Noro¹, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ.)

Keywords:semiconductor, ferroelectrics, wavelength conversion

The integration of squeezed light sources and electric field driven Mach-Zehnder interferometers can be applied to high-speed and stable photonic quantum computation. GaN is an attractive crystal for the above application because of its large optical nonlinearity and high conductivity by doping impurities. However, squeezed light generation devices using only GaN require strong excitation of more than 100 mW to obtain a sufficient squeezing level. To reduce the excitation intensity, we designed a device with GaN as the bottom layer and LiNbO₃ as the top layer.