Characterization for GaAs-MISFET using Al<sub>2</sub>O<sub>3</sub> Gate Oxide

Presentation information

Oral presentation

1 Interdisciplinary Physics and Related Areas of Science and Technology » 1.3 Novel technologies and interdisciplinary engineering

Thu. Mar 24, 2022 1:00 PM - 4:45 PM D316 (D316)

2:45 PM - 3:00 PM

〇(B)Yuuki Tsuji¹, Tegyu Woo¹, Syouhei Lin¹, Joji Maeda¹, Tarou Itatani², Takeru Amano² (1.Tokyo Univ. Science, 2.AIST)

Keywords:Atomic Layer Deposition, Al2O3, GaAs MISFET

The operation of a MISFET using an Al₂O₃ film formed by atomic layer deposition as the gate dielectric was confirmed.