[24p-E103-1~17] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

△ [24p-E103-7] Grain Size Control of Poly-Si Thin Films Crystallized by Excimer Laser Annealing with Intensity Distribution, and Electrical Properties of the Poly-Si TFTs

〇Toru Okatsugi¹, Nagano Takahiro¹, Kurashige Takayuki¹, Katayama Keita¹, Kakimoto Yoshiaki², Nakamura Daisuke¹, Goto Tetsuya³, Ikenoue Hiroshi^1,2 (1.ISEE. Kyushu Univ., 2.Dept. GPI, Kyushu Univ., 3.Tohoku Univ.)

Keywords:Low Temperature Poly-Si, Laser annealing, Thin film transistor

It is well known that low-temperature poly-Si (LTPS) thin films crystallized by excimer laser annealing (ELA) have high field-effect mobility. Therefore, thin film transistors (TFTs) using the LTPS thin films as channel material are used as the driving circuits of high-definition displays. We reported that the grain position and grain size of LTPS thin films can be controlled by ELA with spatial intensity distribution controlled by dot pattern masks and a projection optical system. In this study, we have investigated the optimum intensity distribution of irradiated laser to fabricate high performance TFTs by changing the size of the light-shielding area of the dot masks. And we would discuss the relationship of the LTPS crystallinity and the LTPS-TFT mobilities.