[24p-E103-1~17] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[24p-E103-9] Effect of As irradiation on the surface roughness of Si thin films grown on CaF₂

〇(M1)Masataka Saito¹, Gensai Tei¹, Liu Long¹, Yohei Koyanagi¹, Daiki Sugawara¹, Masahiro Watanabe¹ (1.Tokyo Inst.)

Keywords:epitaxy, Si, surface roughness

Calcium fluoride (CaF₂) has a similar crystal structure to that of silicon (Si) with a small lattice mismatch (~0.6%), which enables multilayer epitaxial growth and a relatively large conduction band discontinuity (1~2.3[eV]) at the Si/CaF₂ interface. In the present study, it was suggested that the surface energy of Si was reduced by the surfactant effect of As in the crystal growth of Si quantum well layers on CaF₂, which promoted the planarization.