[24p-E105-1~13] CS.5 6.1 強誘電体薄膜、13.3 絶縁膜技術、13.5 デバイス／配線／集積化技術のコードシェアセッション

▼ [24p-E105-11] Effect of Kr plasma sputtering for Pt gate electrode deposition on the ferroelectric property of 5 nm thick nondoped HfO₂ directly formed on Si(100)

〇(DC)JoongWon Shin¹、Masakazu Tanuma¹、Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

キーワード：Ferroelectric nondoped HfO2, Pt gate electrode, RF magnetron sputtering

In this research, we investigated the effects of Kr plasma sputtering for Pt gate electrode deposition on the ferroelectric properties of 5 nm thick ferroelectric nondoped HfO₂.The remnant polarization (2P_r) was increased to 7.5 μC/cm² by Kr plasma sputtering for Pt gate electrode deposition than that of 5.9 μC/cm² in the case of Ar sputtering. Furthermore, Kr plasma sputtering for Pt gate electrode deposition was effective to reduce the gate leakage current of MFS diode with lower D_it of 2.8×10¹¹ cm^-2eV^-1 by decreasing the sputtering damage.