Effect of Kr plasma sputtering for Pt gate electrode deposition on the ferroelectric property of 5 nm thick nondoped HfO<sub>2</sub> directly formed on Si(100)

JoongWon Shin, Masakazu Tanuma, Shun-ichiro Ohmi

4:15 PM - 4:30 PM

▼ [24p-E105-11] Effect of Kr plasma sputtering for Pt gate electrode deposition on the ferroelectric property of 5 nm thick nondoped HfO₂ directly formed on Si(100)

〇(DC)JoongWon Shin¹, Masakazu Tanuma¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

Keywords:Ferroelectric nondoped HfO2, Pt gate electrode, RF magnetron sputtering

In this research, we investigated the effects of Kr plasma sputtering for Pt gate electrode deposition on the ferroelectric properties of 5 nm thick ferroelectric nondoped HfO₂.The remnant polarization (2P_r) was increased to 7.5 μC/cm² by Kr plasma sputtering for Pt gate electrode deposition than that of 5.9 μC/cm² in the case of Ar sputtering. Furthermore, Kr plasma sputtering for Pt gate electrode deposition was effective to reduce the gate leakage current of MFS diode with lower D_it of 2.8×10¹¹ cm^-2eV^-1 by decreasing the sputtering damage.

Presentation information

[24p-E105-1~13] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

▼ [24p-E105-11] Effect of Kr plasma sputtering for Pt gate electrode deposition on the ferroelectric property of 5 nm thick nondoped HfO₂ directly formed on Si(100)

Presentation information

[24p-E105-1~13] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

▼ [24p-E105-11] Effect of Kr plasma sputtering for Pt gate electrode deposition on the ferroelectric property of 5 nm thick nondoped HfO2 directly formed on Si(100)

▼ [24p-E105-11] Effect of Kr plasma sputtering for Pt gate electrode deposition on the ferroelectric property of 5 nm thick nondoped HfO₂ directly formed on Si(100)