[24p-E105-1~13] CS.5 6.1 強誘電体薄膜、13.3 絶縁膜技術、13.5 デバイス／配線／集積化技術のコードシェアセッション

▼ [24p-E105-12] Ferroelectric polarization switching of hafnium zirconium oxide thin-film device investigated by second harmonic generation spectroscopy

〇(PC)Siddhant Anandrao Dhongade¹、Yasutaka Kitahama¹、Hiroyuki Matsuzaki¹、Hiroyuki Yamada¹、Akihito Sawa¹ (1.National Institute of Advanced Industrial Science and Technology (AIST))

キーワード：Hafnium zirconium oxide, ferroelectric thin film, second harmonic generation