[24p-E204-1~10] 6.2 Carbon-based thin films

[24p-E204-6] Development of Si-added amorphous carbon thin films with controlling amorphous structure and establishment of its synthesis method for high efficiency multi-junction solar cells

〇(M2)Bunta Kondo¹, Kensuke Honda¹ (1.Grad. Sch. Sci. Technol. Innov. Yamaguchi Univ.)

Keywords:amorphous carbon, semiconductor, p-n junction

In order to realize multi-junction solar cells based on Si-added amorphous carbon (a-Si_xC_1-x) semiconductors, this research focuses on the formation of a-Si_xC_1-x structures suitable for solar cells and establishment of the method to realize it. Plasma-enhanced chemical vapor deposition (PECVD) with cathodic coupling was used to realize a-Si_xC_1-x with a homogeneous amorphous structure and an optical gap controlled below 1.70 eV. As a results, high efficiency of n-type a-Si_xC_1-x/p-Si hetero-junction solar cells was achieved.