[24p-E205-1~18] 9.4 Thermoelectric conversion

[24p-E205-10] Fabrication of p-n thermoelectric pair using liquid-gated ambipolar transistor

〇Takenori Fujii¹ (1.CRC, Univ. of Tokyo)

Keywords:carbon nanotube, electric double layer transistor, ambipoler transistor

To fabricate a p-n junction for a thermoelectric device, an ambipoler transistor structure was applied to semiconducting single-walled carbon nanotube (SWCNT) sheets. Here, we present a method to form a p-n thermoelectric pair in a liquid-gated ambipoler SWCNT transistor. The positive and negative carriers can be created by applying opposite gatevoltage on source and drain electrodes, and the position of the p-n junction was electrically controlled by the potential difference between source and drain electrodes. We observed the positive and negative thermopower in the positively and negatively biased region, respectively.