[24p-E302-1~16] CS.9 Code-sharing Session of 13.7 & 15.6

[24p-E302-1] Chemical etching of an InP substrate assisted by graphene oxide

〇Wataru Kubota¹, Toru Utsunomiya¹, Takashi Ichii¹, Hiroyuki Sugimura¹ (1.Kyoto Univ.)

Keywords:assisted etching, InP, graphene oxide

Chemical etching of semiconductor surfaces assisted by various types of catalysts such as noble metals or carbon materials is drawing much attention. Previously, we reported chemical etching of silicon assisted by graphene oxide. In this report, we tried to apply the GO-assisted etching process to an InP substrate. We revealed that GO can enhance the etching reaction in the HCl-HNO3 system.