[24p-E302-1~16] CS.9 13.7 化合物及びパワーデバイス・プロセス技術・評価、15.6 IV族系化合物（SiC）のコードシェアセッション

▼ [24p-E302-11] Understandings of the kinetic balance between N incorporation and removal affected by SiC surface oxidation for 4H-SiC/SiO₂ structure in high-temperature N₂ (+O₂) annealing

〇(D)Yang Tianlin¹、Koji Kita¹ (1.Univ. Tokyo)

キーワード：SiC surface nitridation, Nitridation kinetics, High-temperature N2 annealing

The kinetic balance between the reacitons of N incorporation and N removal was systematically investigated for 4H-SiC/SiO₂ structure with high-temperature N₂ annealing. By assuming a constant N-incorporation rate during the annealing, and the removal rate to be proportional to the surface oxidation rate and surface N density, a nitridation kinetic model was proposed. By controlling the rates of N-incorporation rate and removal independently, such as tuning the oxidation rate with O₂ introduction into the N₂ ambient, we found that slight oxidation would enhance the N-incorporation rate, but the ratio between the rates of incorporation and surface oxidation would be the essential parameter to indicate the incorporation-removal balance which determines the saturation level of surface N density.